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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *Complement to type BDW84/84A/84B/84C/84D *DARLINGTON *High DC current gain APPLICATIONS *For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=6A ,IB=12mA IC=15A ,IB=150mA IC=6A ; VCE=3V VCB=45V, IE=0 TC=150 VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 VCB=120V, IE=0 TC=150 VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=6A ; VCE=3V IC=15A ; VCE=3V IE=15A IC=30mA, IB=0 SYMBOL BDW83/83A/83B/83C/83D CONDITIONS MIN 45 60 80 100 120 TYP. MAX UNIT V 2.5 4.0 2.5 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V mA 1 mA 2 750 100 3.5 0.9 7.0 20000 mA V s s IC = 10 A, IB1 =-IB2=40 mA RL=3B; VBE(off) = -4.2V Duty CycleC2% THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 0.83 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDW83/83A/83B/83C/83D Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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